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-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors
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10.1063/1.2388244
/content/aip/journal/apl/89/20/10.1063/1.2388244
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388244

Figures

Image of FIG. 1.
FIG. 1.

Structures of the first generation dendrimers. (a) 4(HPBT)-benzene and (b) 4(HPTT)-benzene.

Image of FIG. 2.
FIG. 2.

(Color online) Optical absorption (UV/visible) and emission (PL) spectra of 4(HPBT)-benzene and 4(HPTT)-benzene. (a) 4(HPBT)-benzene, PL excitation wavelength: . (b) 4(HPTT)-benzene, PL excitation wavelength: . Sample: (1) solution, (2) annealed film, and (3) solution.

Image of FIG. 3.
FIG. 3.

(Color online) X-ray diffraction patterns of the two dendrimers. (a) 4(HPBT)-benzene and (b) 4(HPTT)-benzene. (1) as-cast film and (2) annealed film.

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics of field effect transistor devices with and . is the source-drain voltage. (a) 4(HPBT)-benzene and (b) 4(HPTT)-benzene.

Tables

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Table I.

Physical properties of the three compounds for OFET.

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/content/aip/journal/apl/89/20/10.1063/1.2388244
2006-11-14
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type semiconducting dendrimers bearing thiophenyl peripheral moieties for organic field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388244
10.1063/1.2388244
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