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Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Low-temperature MBE of ZnCdO: (a) Cd content vs BPR deduced from EDX. A weak contribution from the ZnMgO buffer is not deducted. (b) RHEED oscillations after growth initiation of , inset: RHEED pattern of a thick epilayer taken along the azimuth. (c) HRXRD scan of a epilayer. Reflex features corresponding to (0002) ZnCdO and ZnMgO as well as are indicated. (d) -lattice constant vs Cd content. (e) AFM image of the same surface from which the RHEED pattern in the inset of (b) is recorded. (f) AFM height profile taken along the line marked in (e).

Image of FIG. 2.
FIG. 2.

(Color online) Optical properties of ZnCdO epilayers grown by low-temperature MBE. (a) Transmission at room temperature for a Cd content of (i) 0.06, (ii) 0.13, (iii) 0.21, and (iv) 0.32. Spectra are recorded by a Shimadzu UV-2101PC spectrometer. (b) Room temperature PL of the same epilayers as in (a) excited above the ZnMgO buffer band gap.

Image of FIG. 3.
FIG. 3.

(Color online) Low-temperature MBE of single QW structures. (a) RHEED oscillations during growth of the QW and the upper ZnO barrier. (b) PL spectra excited above the ZnO band gap, well width . Full curves: ; dashed curve: .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy