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Mechanism for Ohmic contact formation on passivated high-electron-mobility transistors
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10.1063/1.2388889
/content/aip/journal/apl/89/20/10.1063/1.2388889
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388889
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HAADF image of the complete metal contact layer (sample: series A, annealed at ). grains (gray) are formed in and TiN can be retrieved near the AlGaN interface.

Image of FIG. 2.
FIG. 2.

HAADF image of the metal/AlGaN interface (sample: series A, annealed at ). At the interface Au (bright layer) can be detected.

Image of FIG. 3.
FIG. 3.

HAADF image of the metal/AlGaN interface (sample: series A, annealed at ). At the interface AlN (dark layer) can be detected.

Image of FIG. 4.
FIG. 4.

Bright-field TEM image, taken in GaN(0002) two-beam diffraction condition (series B, annealed at ). At the metal/AlGaN interface, large AlN pyramidal dots can be retrieved. The TiN layer (bright) is floating in the matrix.

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/content/aip/journal/apl/89/20/10.1063/1.2388889
2006-11-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/20/10.1063/1.2388889
10.1063/1.2388889
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