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High filling fraction gallium phosphide inverse opals by atomic layer deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) SEM image of the top surface of a GaP infiltrated opal showing conformal, polycrystalline film growth. The inset shows a higher magnification image at a small gap between spheres, selected to reveal the conformal film growth. (b) Cross section through (111) plane of a inverse opal. The shell-like structure of the GaP film confirms the conformal nature of the growth mode. The inset shows details of the air cavity structure and the high quality of the conformal GaP backbone for a inverse opal.

Image of FIG. 2.
FIG. 2.

X-ray diffraction data for a GaP inverse opal. Labeled diffraction peaks agree in both position and intensity with published data, confirming the cubic GaP crystal structure. The inset shows an energy dispersion spectrum for an inverse opal, confirming the presence of only Ga and P within the lattice.

Image of FIG. 3.
FIG. 3.

Photonic band structure calculated for a conformal filling fraction of 0.224 (complete conformal infiltration) compared to the measured reflectance spectrum from a GaP inverse opal. As indicated by arrows, the measured spectrum agrees very well with the calculated gap positions and widths, shaded in gray along the direction. The solid gray bar indicates the full photonic band gap of the structure. The excellent agreement between the calculated bands and measured reflectance directly confirms the high GaP filling fraction.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High filling fraction gallium phosphide inverse opals by atomic layer deposition