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Experimental (symbols) and calculated (solid line) characteristics for ITO/PEDOT:PSS/ThCBM/ electron-only device with a thickness . is plotted against the applied voltage , corrected for the built-in voltage and the voltage drop over the ITO/PEDOT:PSS layers . The inset shows the molecular structure of ThCBM.
characteristics of ITO/PEDOT:PSS/P3HT: devices as cast (circles) and after thermal annealing (squares) are shown in a semilogarithmic plot. The devices were measured at room temperature in the dark (full symbols) and under illumination (empty symbols) through the transparent ITO electrode. The devices under illumination were measured by a halogen lamp with intensity of , calibrated using a reference silicon diode. The inset shows the characteristics under illumination in a linear scale.
Experimental (symbols) and calculated (solid lines) for an ITO/PEDOT:PSS/P3HT:ThCBM/Pd hole-only device, as cast and after thermal annealing (see legend). The active layer thickness is .
AFM height and simultaneously taken phase images of P3HT:ThCBM films, as cast (a) and after thermal annealing (b).
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