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Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Photoconductive response vs gate voltage for different values of applied drain-source voltage from 0.025 up to [(∎): , (●): , (▴): , (▾): , and (◆): ] at a fixed value of the BWO frequency of . For typical nonresonant signal is observed. For higher values the resonant peak starts to grow and shifts to higher values of gate voltage. Inset: schematic of the gate-lenght InGaAs HEMTs that highlights cap layer regions.

Image of FIG. 2.
FIG. 2.

Photoinduced drain-source voltage as a function of gate bias for different external frequencies [(▴): , (∎): , and (●): ] at a fixed value of applied drain-source voltage of . At the lowest frequency, the response is nonresonant. The resonance appears at at and shifts to higher gate bias for higher frequency . Inset: output characteristics at room temperature (drain current vs source-drain voltage ) for different values of gate voltage (from 0 down to with step).

Image of FIG. 3.
FIG. 3.

(Color online) Maxima of resonant gate voltages corresponding to different frequencies of the radiation source at three different fixed drain-to-source voltages [(∎): , (●): , and (▴): ]. Dashed lines, respectively, from left to right are calculations using Eqs. (2) and (3) for three values of the effective threshold voltage (, , and ) corresponding to three values of applied (0.1, 0.2, and ). Electron velocity is assumed to be . Solid lines are calculations using Eq. (4) at two different values of electron drift velocity ( and ) for each effective threshold voltage (i.e., , , and ). Filled areas represent drift velocity range (between and ) which can match observed frequency dependence as a function of gate voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors