1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
Rent:
Rent this article for
USD
10.1063/1.2392999
/content/aip/journal/apl/89/22/10.1063/1.2392999
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/22/10.1063/1.2392999
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Photoconductive response vs gate voltage for different values of applied drain-source voltage from 0.025 up to [(∎): , (●): , (▴): , (▾): , and (◆): ] at a fixed value of the BWO frequency of . For typical nonresonant signal is observed. For higher values the resonant peak starts to grow and shifts to higher values of gate voltage. Inset: schematic of the gate-lenght InGaAs HEMTs that highlights cap layer regions.

Image of FIG. 2.
FIG. 2.

Photoinduced drain-source voltage as a function of gate bias for different external frequencies [(▴): , (∎): , and (●): ] at a fixed value of applied drain-source voltage of . At the lowest frequency, the response is nonresonant. The resonance appears at at and shifts to higher gate bias for higher frequency . Inset: output characteristics at room temperature (drain current vs source-drain voltage ) for different values of gate voltage (from 0 down to with step).

Image of FIG. 3.
FIG. 3.

(Color online) Maxima of resonant gate voltages corresponding to different frequencies of the radiation source at three different fixed drain-to-source voltages [(∎): , (●): , and (▴): ]. Dashed lines, respectively, from left to right are calculations using Eqs. (2) and (3) for three values of the effective threshold voltage (, , and ) corresponding to three values of applied (0.1, 0.2, and ). Electron velocity is assumed to be . Solid lines are calculations using Eq. (4) at two different values of electron drift velocity ( and ) for each effective threshold voltage (i.e., , , and ). Filled areas represent drift velocity range (between and ) which can match observed frequency dependence as a function of gate voltage.

Loading

Article metrics loading...

/content/aip/journal/apl/89/22/10.1063/1.2392999
2006-11-29
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/22/10.1063/1.2392999
10.1063/1.2392999
SEARCH_EXPAND_ITEM