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(Color online) Schematic showing the capping process designed to achieve band-edge NMOS metal gate electrode.
(Color online) Back side SIMS showing that Hf and La have completely intermixed following device fabrication process.
(Color online) Transistor curves clearly showing the shift caused by the capping. No stretch or distortion in the curves is observed.
(Color online) Results indicating little change in EOT occur with capping, while the is reduced more than .
(Color online) Electron mobility of devices with and without capping. High-field mobility in excess of 90% has been obtained. Peak mobility is degraded indicating Coloumbic charge scattering perhaps due to La-related bulk charges.
Work function of TaN and gates on HfSiO without (solid bars) and with (open bars) capping. The work function shift caused by is metal gate dependent.
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