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Work function engineering using lanthanum oxide interfacial layers
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10.1063/1.2396918
/content/aip/journal/apl/89/23/10.1063/1.2396918
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2396918
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic showing the capping process designed to achieve band-edge NMOS metal gate electrode.

Image of FIG. 2.
FIG. 2.

(Color online) Back side SIMS showing that Hf and La have completely intermixed following device fabrication process.

Image of FIG. 3.
FIG. 3.

(Color online) Transistor curves clearly showing the shift caused by the capping. No stretch or distortion in the curves is observed.

Image of FIG. 4.
FIG. 4.

(Color online) Results indicating little change in EOT occur with capping, while the is reduced more than .

Image of FIG. 5.
FIG. 5.

(Color online) Electron mobility of devices with and without capping. High-field mobility in excess of 90% has been obtained. Peak mobility is degraded indicating Coloumbic charge scattering perhaps due to La-related bulk charges.

Image of FIG. 6.
FIG. 6.

Work function of TaN and gates on HfSiO without (solid bars) and with (open bars) capping. The work function shift caused by is metal gate dependent.

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/content/aip/journal/apl/89/23/10.1063/1.2396918
2006-12-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Work function engineering using lanthanum oxide interfacial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2396918
10.1063/1.2396918
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