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High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
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10.1063/1.2397562
/content/aip/journal/apl/89/23/10.1063/1.2397562
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2397562
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM images of the sample A surfaces at different growth stages: after (a) the GaN template growth, (b) after the growth of a InGaN layer, and (c) after the GaN cap layer deposition.

Image of FIG. 2.
FIG. 2.

(a) AFM profiles and (b) calculated energy profiles for the QW next to the surface. The dotted line represents an averaged energy profile. See text below for explanation.

Image of FIG. 3.
FIG. 3.

(Color online) (a) CL spectra of sample B. Images (b) by AFM of the surface and by monochromatic CL (on a different location) at (c) and (d) of the thin QW of sample B.

Image of FIG. 4.
FIG. 4.

(Color online) Streak camera traces (a) in the valley and (b) outside the valley region. Color coded intensities are in arbitrary units. Black lines are guides to the eye.

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/content/aip/journal/apl/89/23/10.1063/1.2397562
2006-12-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2397562
10.1063/1.2397562
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