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Hole transport in -type ZnO films grown by plasma-assisted molecular beam epitaxy
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10.1063/1.2398908
/content/aip/journal/apl/89/23/10.1063/1.2398908
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2398908
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Experimental Hall mobility as a function of temperature for samples I (open circles) and II (closed circles). Also shown by curves are the calculated temperature dependence of the total hole mobility and the the contribution of various scattering mechanisms (, ionized impurity; , acoustic; , piezoelectric; , polar optical). The curve of is the calculated temperature dependence of the hole mobility for inhomogeneous -type ZnO by Eq. (1).

Image of FIG. 2.
FIG. 2.

Temperature dependence of the averaged hole concentration for sample I. The inset is the plot of vs in the temperature range of .

Image of FIG. 3.
FIG. 3.

(Color online) AFM image (a) and XRD scan of the (103) reflection (b) of sample I. The inset of (b) is the -scan curve of the (002) reflection for sample I.

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/content/aip/journal/apl/89/23/10.1063/1.2398908
2006-12-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2398908
10.1063/1.2398908
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