Full text loading...
(a) Schematic of the sample structure used in this study. (b) AFM image of the patterned GaAs(001) substrate. The upper right inset shows a magnified AFM image of a single patterned hole. The lower right inset shows an AFM image of a hole prior to the GaAs QD growth. The elongation of the hole is due to the anisotropy of GaAs diffusion during the buffer layer growth. The color scale is from (black) to (white).
(Color online) (a) integrated PL intensity map of a array of ordered GaAs QDs collected with an excitation power of and acquisition time of . The PL signal is integrated over the wavelength range between 735 and . (b) Individual PL spectra of ordered GaAs QDs in the patterned holes. The inset shows a wide range spectrum consisting of GaAs QW peak, GaAs QD peak, and GaAs bulk peak.
PL spectrum from an ordered single GaAs QD. Neutral and charged exciton lines are marked as X and , respectively. Upper left inset shows the integrated PL peak intensity of the exciton line as a function of excitation power density. The upper right inset shows the autocorrelation measurement under cw excitation obtained from the X transition.
(Color online) (a) PL intensity of the neutral exciton line as a function of polarization angle. (b) PL spectra at 0° and 90° polarizations. Open symbols are experimental data and the solid lines are the fits with Lorentzian functions. (c) Variation of the neutral exciton peak position and the FWHM as a function of polarization angle. The solid line is the corresponding fit.
Article metrics loading...