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diffusion barrier for Cu metallization on Si
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10.1063/1.2400071
/content/aip/journal/apl/89/23/10.1063/1.2400071
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2400071
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of as-deposited and annealed films at the temperature shown in the figure: (a) for and (b) for .

Image of FIG. 2.
FIG. 2.

EDS depth profile of (a) as deposited and (b) annealed at for .

Image of FIG. 3.
FIG. 3.

HRTEM image of annealed at for .

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/content/aip/journal/apl/89/23/10.1063/1.2400071
2006-12-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge∕HfNx diffusion barrier for Cu metallization on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2400071
10.1063/1.2400071
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