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Strong suppression of the yellow luminescence in C-doped GaN in air ambient
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10.1063/1.2400074
/content/aip/journal/apl/89/23/10.1063/1.2400074
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2400074
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room-temperature PL spectrum from a GaN:C layer in vacuum and air ambient. The transition from “vacuum-1” to “vacuum-2” state took place after annealing the sample in vacuum at and subsequent cooling down to room temperature. The QEs of the YL band are 0.001% in air and 0.3% in vacuum after the annealing. .

Image of FIG. 2.
FIG. 2.

Evolution of the YL intensity under different ambient conditions.

Image of FIG. 3.
FIG. 3.

Schematic of band potentials and main transitions in GaN:C layer grown on sapphire substrate. The solid and dashed arrows indicate radiative and nonradiative transitions, respectively. A very thin oxide layer at GaN surface, as well as adsorbed oxygen species on it, is also schematically shown. NS denotes a thin near-surface region where potentials are nearly flat. A denotes deep acceptor states responsible for the YL band.

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/content/aip/journal/apl/89/23/10.1063/1.2400074
2006-12-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong suppression of the yellow luminescence in C-doped GaN in air ambient
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2400074
10.1063/1.2400074
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