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Electron dephasing in wurtzite indium nitride thin films
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10.1063/1.2400097
/content/aip/journal/apl/89/23/10.1063/1.2400097
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2400097
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Magnetic field dependence of the magnetoresistivity in the InN sample at . (b) Low magnetic field magnetoresistivity of the InN sample at various temperatures. Solid curves are the fittings of the weak localization theory with spin-orbit interactions to the experimental data (open squares).

Image of FIG. 2.
FIG. 2.

(a) Temperature dependence of the resistivity in InN between 1.4 and without external magnetic fields. (b) Low temperature resistivity of the InN sample, together with the calculated individual contribution of the weak localization and electron-electron interactions (solid curves) from the localization-interaction model.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of the obtained electron dephasing times in InN from the experimental magnetoresistivity results. (b) Raman spectrum line shape fitting with the SCM (dotted curve) and Lorentzian (dashed curve) for the phonon mode of the hexagonal InN.

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/content/aip/journal/apl/89/23/10.1063/1.2400097
2006-12-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron dephasing in wurtzite indium nitride thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2400097
10.1063/1.2400097
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