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Quantum dot manipulation in a single-walled carbon nanotube using a carbon nanotube gate
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) [(a)–(d)] Schematics for fabrication of the CNT-insulator-CNT structure. (e) AFM image of a resulting device. The grown bottom tube lies under the lower left and upper right electrodes and the aligned top tubes are placed between the lower right and upper left electrodes.

Image of FIG. 2.
FIG. 2.

(Color online) (a) CNTG dependent at with a fixed bias voltage . (b) Double gate (BG and CNTG) dependent contour plots at with a fixed bias voltage . (c) Absolute as a function of and at . The dashed lines indicate Coulomb oscillation peaks. (d) Schematic illustration of the proposed effect on the electron levels in the conducting CNT channel due to a negative voltage on the gate CNT. The situation is complicated by the fact that the gate voltage is responsible both for the shifting of energy levels in the CNT and for pinching it off to create two, rather than one, quantum dot systems.

Image of FIG. 3.
FIG. 3.

vs at different temperatures for a second device . Coulomb oscillations are again seen for negative .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum dot manipulation in a single-walled carbon nanotube using a carbon nanotube gate