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(Color online) Sample schematic of a relaxed SiGe on a buffer consisting of alternating layers of SiGeC and SiGe.
Plan-view TEM of the sample after anneal at showing an irregular network of misfit dislocations.
(a) Bright-field plan-view TEM image of the buffer/Si interface and the dark-field images of the same location taken at (b) , (c) , and (d) . The arrows indicate the pure edge dislocations.
(Color online) (a) Schematic illustration of how two 60° misfit dislocations form a pure edge dislocations via cross slip around a SiGeC domain and (b) the vacancy concentration at the SiGeC domain/SiGe matrix interface.
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