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Threading dislocation reduction by SiGeC domains in heterostructure: Role of pure edge dislocations
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10.1063/1.2402227
/content/aip/journal/apl/89/23/10.1063/1.2402227
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2402227
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sample schematic of a relaxed SiGe on a buffer consisting of alternating layers of SiGeC and SiGe.

Image of FIG. 2.
FIG. 2.

Plan-view TEM of the sample after anneal at showing an irregular network of misfit dislocations.

Image of FIG. 3.
FIG. 3.

(a) Bright-field plan-view TEM image of the buffer/Si interface and the dark-field images of the same location taken at (b) , (c) , and (d) . The arrows indicate the pure edge dislocations.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Schematic illustration of how two 60° misfit dislocations form a pure edge dislocations via cross slip around a SiGeC domain and (b) the vacancy concentration at the SiGeC domain/SiGe matrix interface.

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/content/aip/journal/apl/89/23/10.1063/1.2402227
2006-12-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threading dislocation reduction by SiGeC domains in SiGe∕SiGeC heterostructure: Role of pure edge dislocations
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2402227
10.1063/1.2402227
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