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heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory
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10.1063/1.2402232
/content/aip/journal/apl/89/23/10.1063/1.2402232
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2402232
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) AFM image of the heteronanocrystals of our memory devices. (b) AFM image of the heteronanocrystals after selective etching in diluted HF. Smaller features with similar density as the original heteronanocrystals are the remaining Si dot portions of the heteronanocrystals. (c) XPS spectra of the samples shown in (a) and (b).

Image of FIG. 2.
FIG. 2.

curves for the neutral and the programed heteronanocrystal memory. Memory effect is clearly observed.

Image of FIG. 3.
FIG. 3.

Threshold voltage shift as a function of (a) writing voltage, (b) writing time, and (c) erasing time, for memories with heteronanocrystal and Si nanocrystal floating gates, respectively.

Image of FIG. 4.
FIG. 4.

Retention characteristics of a heteronanocrystal memory and a Si nanocrystal memory.

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/content/aip/journal/apl/89/23/10.1063/1.2402232
2006-12-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: TiSi2∕Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2402232
10.1063/1.2402232
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