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(Color online) (a) AFM image of the heteronanocrystals of our memory devices. (b) AFM image of the heteronanocrystals after selective etching in diluted HF. Smaller features with similar density as the original heteronanocrystals are the remaining Si dot portions of the heteronanocrystals. (c) XPS spectra of the samples shown in (a) and (b).
curves for the neutral and the programed heteronanocrystal memory. Memory effect is clearly observed.
Threshold voltage shift as a function of (a) writing voltage, (b) writing time, and (c) erasing time, for memories with heteronanocrystal and Si nanocrystal floating gates, respectively.
Retention characteristics of a heteronanocrystal memory and a Si nanocrystal memory.
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