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Determination at of the hole capture cross section of chromium-boron pairs in -type silicon
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10.1063/1.2402261
/content/aip/journal/apl/89/23/10.1063/1.2402261
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2402261
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Injection-level-dependent carrier lifetime of a chromium-implanted (dose of ) silicon wafer, measured at at different times after illumination, characteristics of the presence of dissolved iron in the silicon bulk.

Image of FIG. 2.
FIG. 2.

Injection-level-dependent carrier lifetime of a chromium-implanted (dose of ) silicon wafer measured at at different times after annealing at and after total reassociation of the pairs.

Image of FIG. 3.
FIG. 3.

Reduction at of the term , proportional to the interstitial chromium concentration, for a chromium-implanted (dose of ) silicon wafer, due to pairs repairing after their dissociation by an annealing at .

Image of FIG. 4.
FIG. 4.

Computed [Cr] vs , determined by using the SRH equation from the known recombination parameters of and at and the experimental values of and .

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/content/aip/journal/apl/89/23/10.1063/1.2402261
2006-12-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/23/10.1063/1.2402261
10.1063/1.2402261
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