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Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation
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10.1063/1.2402905
/content/aip/journal/apl/89/24/10.1063/1.2402905
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/24/10.1063/1.2402905
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the junction formation: (a) Ge preamorphizing implant and subsequent B implantation in amorphous Si (shaded area), (b) partial regrowth of the amorphous Si layer, and (c) complete Si recrystallization.

Image of FIG. 2.
FIG. 2.

Boron concentration profiles of as-implanted sample (dashed line) and annealing sample (continuous line), referred to the left log scale. Normalized Rutherford backscattering spectometry-channeling yield vs depth for the as-implanted (squares), annealead (circles), and annealead (triangles) samples and for bare silicon (stars) are also reported (right scale).

Image of FIG. 3.
FIG. 3.

XANES spectra of the as-implanted, annealed, and annealed samples. The main features are marked by dashed lines.

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/content/aip/journal/apl/89/24/10.1063/1.2402905
2006-12-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/24/10.1063/1.2402905
10.1063/1.2402905
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