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All-carbon nanotube-based junction with virtual source and drain of carbon nanotubes by in situ one-step process for practical integrated nanoelectronics
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10.1063/1.2403186
/content/aip/journal/apl/89/24/10.1063/1.2403186
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/24/10.1063/1.2403186
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) characteristics of a typical all-scarbon nanotube-sbased three terminal junction made by direct in situ suspended growth. (a) characteristics of each CNT electrode. To measure this current, two probes were laid on an entangled CNT sheet, acting as drain and source electrodes, respectively. (b) CNT channel current vs drain bias with . The inset figure shows a patterned layered catalyst for lateral bridging of CNT. (c) Temperature dependent change of and appearance of Coulomb gap in the low temperature regime. Doped-Si substrate was used as gate electrode.

Image of FIG. 2.
FIG. 2.

(a) Gate response characteristics of the electrode of CNTs under small drain bias. (b) Gate response of CNT channel with drain bias level. (c) characteristics after UV exposure. (d) Conductance contour as a function of and obtained at . (c) with . The figures show the electrical breakdown of the high current carrying CNT channels under continuous electrical stressing.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Capacitance vs frequency characteristics for the CNT channel of all-CNT-based junction measured at room temperature and (b) transferred charge (estimated from capacitance measurement) vs as a function of temperature. During the measurements, ac voltage was applied between drain and source.

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/content/aip/journal/apl/89/24/10.1063/1.2403186
2006-12-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: All-carbon nanotube-based junction with virtual source and drain of carbon nanotubes by in situ one-step process for practical integrated nanoelectronics
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/24/10.1063/1.2403186
10.1063/1.2403186
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