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Electric control of room temperature ferromagnetism in a field-effect transistor
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic the FET structure prepared for MCD measurements and the electric-transport properties for the LBMO channel layer. (a) The thicknesses of the LBMO channel layer and the PZT gate layer are approximately 10 and , respectively. The gate area size is and (b) the temperature dependence of the channel resistivity with ferroelectric polarity. and refer to positive and negative polarities in the interface of the ferroelectric gate layer with a LBMO channel, respectively. The width of the modulated by switching ferroelectric polarity was between in and in .

Image of FIG. 2.
FIG. 2.

Magnetic field dependence of the MCD signal with negative and positive ferroelectric polarities. The temperatures were (a) , (b) , and (c) for each polarity. Horizontal broken lines indicate saturated points of the MCD signal in compared with that in . (g) Comparison of averaged MCD values between negative and positive polarities. Temperature dependence of averaged MCD values in (red closed circles) and (blue closed circles) ferroelectric polarities.

Image of FIG. 3.
FIG. 3.

Change in magnetic and electrical properties due to repetitive switching of ferroelectric polarity. Reversibility of changes in the (a) MCD value and (b) channel resistance by switching ferroelectric polarity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric control of room temperature ferromagnetism in a Pb(Zr0.2Ti0.8)O3∕La0.85Ba0.15MnO3 field-effect transistor