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Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) TEM image of undoped nc-Si film on glass using a JEOL 2010F field emission microscope operated at . (b) High resolution TEM view of the nc- interface region of TFT source/drain contacts.

Image of FIG. 2.
FIG. 2.

(a) SIMS depth profiles of hydrogen and oxygen contents in the nc-Si film. (b) Oxygen content of the nc-Si films as a function of deposition temperature, including data reported by other groups (the lines serve to guide the eyes). SIMS depth quantification used standards obtained from Charles Evans & Associates. The samples were analyzed with a Cameca IMS-3f ion microprobe using a positive Cs beam and monitoring various negative secondary ions. The depth scales were obtained by measuring SIMS craters with a Tencor P-10 surface profilometer.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schematic cross-section view of a top-gate staggered TFT. (b) Output characteristics of -channel and -channel ambipolar nc-Si TFTs. The steep rise in drain-source current at high positive drain-source voltages in -channel operation indicates electron injection. (c) Transfer, gate leakage, and transconductance characteristics for -channel and -channel ambipolar nc-Si TFTs at a drain-source voltage of , along with effective field effect mobilities extracted from the transconductance in the linear regime.

Image of FIG. 4.
FIG. 4.

(a) Schematic band diagram showing band bending in grains and grain boundaries due to oxygen donors. (b) Band lineup of grains and grain boundary phase at low oxygen content.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities