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Negative differential resistance and electrical bistability in nanocrystal organic memory devices
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10.1063/1.2409366
/content/aip/journal/apl/89/25/10.1063/1.2409366
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2409366
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the device in the present study and the AFM image of gold crystals with anneal temperature at .

Image of FIG. 2.
FIG. 2.

Current-voltage curves of the (annealed at )/AIDCN/Al device. First, the voltage sweeps from and then sweeps back to . Second, the voltage sweeps from and then sweeps back to .

Image of FIG. 3.
FIG. 3.

(a) characteristics of the five different devices, : , : without gold annealing, and : the devices, which were respectively annealed for at 600, 700, and before the AIDCN deposition. (b) The “peak” current and the “valley” current in these devices. (c) A comparison of the on/off ratio.

Image of FIG. 4.
FIG. 4.

Cycling test of the (annealed at )/AIDCN/Al during the “read-write-read-erase” voltage cycles. Graph (a) shows the applied voltage and graph (b) shows the corresponding current change. The voltages for read, write, and erase are , 4, and , respectively. Note that the current for the writing process is an absolute value. The on-off ratio ranges between and for an applied “read” voltage of .

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/content/aip/journal/apl/89/25/10.1063/1.2409366
2006-12-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative differential resistance and electrical bistability in nanocrystal organic memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2409366
10.1063/1.2409366
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