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Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
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10.1063/1.2410215
/content/aip/journal/apl/89/25/10.1063/1.2410215
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2410215
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of the experimental setup (a), photo of the wafer in the sample holder with the bonding wires (b), and configuration of the contact pads of the transistor (c).

Image of FIG. 2.
FIG. 2.

Responsivity to radiation as a function of the gate voltage for Si MOSFETs of different gate lengths, (gray bar indicates the approximate range of the threshold voltages for different transistors). The inset shows the result of calculations of the maximum responsivity vs gate length. 1: , 2: .

Image of FIG. 3.
FIG. 3.

Noise equivalent power as a function of the gate voltage for Si MOSFETs of different gate lengths, . The inset shows the spectral density showing the detected signal and the background noise for the transistor with . .

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/content/aip/journal/apl/89/25/10.1063/1.2410215
2006-12-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2410215
10.1063/1.2410215
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