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InGaN-light emitting diode with high density truncated hexagonal pyramid shaped hillocks on the emission surface
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10.1063/1.2410229
/content/aip/journal/apl/89/25/10.1063/1.2410229
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2410229

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of the surface of a several nanometer layer on a layer. (b) Schematic structure of the truncated hexagonal pyramid (THP) shaped hillocks on the surface with six sidewall facets. (c) SEM image of the emission surface of the SAH-LED with a low hillock density.

Image of FIG. 2.
FIG. 2.

(a) Schematic structure of the fabricated SAH-LED. (b) Optical power and ESD pass yield of the SAH-LED (∎) and the normal-LED (▴).

Tables

Generic image for table
Table I.

Electrical characteristics of the normal LED and the ASH-LED with high density THP shaped hillock on emission surface.

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/content/aip/journal/apl/89/25/10.1063/1.2410229
2006-12-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2410229
10.1063/1.2410229
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