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Electronic structure of the Mott insulator in a quantum well geometry
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    1 Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
    2 Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
    3 Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
    a) Present address: Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan; electronic mail: hotta@sanken.osaka-u.ac.jp
    b) Also at: Japan Science and Technology Agency, Kawaguchi, 332-0012, Japan.
    Appl. Phys. Lett. 89, 251916 (2006); http://dx.doi.org/10.1063/1.2422898
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Normalized RHEED intensity oscillations during the growth of shallow quantum wells of varying thickness. (b) Schematic diagram of the heterostructures and AFM image of a typical surface morphology. The step height is , corresponding to the height of one perovskite unit cell. (c) Wide scan XPS spectrum of the sample (100).

Image of FIG. 2.
FIG. 2.

(Color online) (a) O and V photoemission spectra of (, 2, 3, and 5) quantum well structures, normalized to the O peak height. (b) V photoemission spectra normalized to the V peak area. The bulk line is taken from Ref. 10, energy aligned by the O peak.

Image of FIG. 3.
FIG. 3.

Angle-dependent XPS spectra for the V core level of the structure. Closed circles, solid lines, and dashed lines show the experimental data, the fitting curve, and the background of the spectra, respectively.

Image of FIG. 4.
FIG. 4.

(a) Fractional area ratio of the peak to the total peak area of V core-level spectra as a function of the emission angle in the sample. Dashed lines represent the relative contribution of each layer to the total spectra. A best fit to the data corresponds to 75% in the first layer, with the rest , as shown in (b).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic structure of the Mott insulator LaVO3 in a quantum well geometry