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White electroluminescence from C- and Si-rich thin silicon oxides
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10.1063/1.2423244
/content/aip/journal/apl/89/25/10.1063/1.2423244
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2423244

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of the SRSO and SRSO:C samples. The two Gaussian fits are a guide for the eyes to analyze the luminescence of the Si-nc in the SRSO:C sample. Inset shows Si and C excess vs layer depth, as measured by XPS.

Image of FIG. 2.
FIG. 2.

and in Fowler-Nordheim plot. indicates the threshold voltage where both Fowler-Nordheim regime and EL start to appear, while is the deduced injection barrier.

Image of FIG. 3.
FIG. 3.

EL of (a) the SRSO:C sample and (b) the SRSO sample. The substrate is biased positively with respect to the gate electrode. The applied voltages are given in the text. The arrows show the increase of applied voltage.

Tables

Generic image for table
Table I.

Implantation energy and doses of and for the silicon-rich silicon oxide enriched with C (SRSO:C). A reference sample without the implantation has also been fabricated, noted as SRSO in the text.

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/content/aip/journal/apl/89/25/10.1063/1.2423244
2006-12-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: White electroluminescence from C- and Si-rich thin silicon oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/25/10.1063/1.2423244
10.1063/1.2423244
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