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Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
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10.1063/1.2410228
/content/aip/journal/apl/89/26/10.1063/1.2410228
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2410228
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Device cross section and plan view.

Image of FIG. 2.
FIG. 2.

(Color online) Measured photoresponse showing excitation of plasmon instability. (a) dependence and (b) dependence. The inset in (b) shows simulated photoresponse to a gate HEMT under radiation for different electron mobilities.

Image of FIG. 3.
FIG. 3.

Measured field emission spectrum when a , laser pulse is irradiated to the device. Upper right: , , and ; inset: temporal response of ; lower left: , , and . Solid (open) arrows indicate possible plasmon modes for the cavities under G1 (G2).

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/content/aip/journal/apl/89/26/10.1063/1.2410228
2006-12-26
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2410228
10.1063/1.2410228
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