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Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
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10.1063/1.2420783
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    Affiliations:
    1 Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China and Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China
    2 Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China
    3 Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China; Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China; and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China
    a) Author to whom corresponding should be addressed; electronic mail: chee@cc.ee.ntu.tw
    Appl. Phys. Lett. 89, 261913 (2006); http://dx.doi.org/10.1063/1.2420783
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/content/aip/journal/apl/89/26/10.1063/1.2420783
2006-12-28
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2420783
10.1063/1.2420783
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