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(a) Regular blanket epitaxial growth conducted at high growth rate, compared to (b) selective epitaxial growth (SEG). Much improved epilayer morphology in (b) indicates that the desirable step-flow growth mechanism may be achieved at much higher adatom supersaturation than previously believed.
SEM image of the mesa lines grown selectively in window at . The lines oriented in different directions reveal the orientation-dependent defect generation.
Cross-sectional SEM of -wide mesa line growth in window at . The insets show magnified images of the mesa walls at both edges of the mask window.
Growth rate for three different epitaxial samples having different fractions of the substrate area covered with the mask. The first point corresponds to regular growth with no mask present.
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