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Carrier concentration induced band-gap shift in Al-doped thin films
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10.1063/1.2424308
/content/aip/journal/apl/89/26/10.1063/1.2424308
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2424308
/content/aip/journal/apl/89/26/10.1063/1.2424308
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/content/aip/journal/apl/89/26/10.1063/1.2424308
2006-12-27
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2424308
10.1063/1.2424308
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