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Carrier concentration induced band-gap shift in Al-doped thin films
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10.1063/1.2424308
/content/aip/journal/apl/89/26/10.1063/1.2424308
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2424308
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical transmission and absorption spectra of undoped ZnO, undoped , and Al-doped films. In the film equals 0.11 and the Al content is about .

Image of FIG. 2.
FIG. 2.

Band-gap energy as a function of the electron concentration in Al-doped films. The solid and dashed lines are the fitting curves.

Image of FIG. 3.
FIG. 3.

Dependence of the band-gap blueshift on the carrier concentration of Al-doped films, with increasing from 0 to 0.21. The points are the experimental data. The curves show the fitting results using the modified BM theory. The inset shows the electron effective masses of alloys with different Mg contents.

Image of FIG. 4.
FIG. 4.

Resistivity, Hall mobility, and electron concentration of films. The Al contents in these films are about .

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/content/aip/journal/apl/89/26/10.1063/1.2424308
2006-12-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2424308
10.1063/1.2424308
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