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Control of structure, conduction behavior, and band gap of films by nitrogen partial pressure ratio of sputtering gases
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10.1063/1.2424449
/content/aip/journal/apl/89/26/10.1063/1.2424449
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2424449

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of annealed films deposited under various nitrogen partial pressure ratios: (a) 0%, (b) 50%, (c) 78%, (d) 83%, and (e) 100%

Image of FIG. 2.
FIG. 2.

Plot of Mg concentration as a function of nitrogen partial pressure ratio.

Image of FIG. 3.
FIG. 3.

Plot of band gap of the films as a function of nitrogen partial pressure ratio.

Tables

Generic image for table
Table I.

Room temperature electrical properties of annealed films deposited under various nitrogen partial pressure ratios . (Note: H, hexagonal; C, cubic.)

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/content/aip/journal/apl/89/26/10.1063/1.2424449
2006-12-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of structure, conduction behavior, and band gap of Zn1−xMgxO films by nitrogen partial pressure ratio of sputtering gases
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2424449
10.1063/1.2424449
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