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Low hysteresis pentacene thin-film transistors using /cross-linked poly(vinyl alcohol) gate dielectric
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Structure of the fabricated bottom-contact pentacene OTFTs. For their optimization, four OTFTs with PECVD layer thicknesses of 100, 350, 700, and were fabricated.

Image of FIG. 2.
FIG. 2.

(Color online) Hysteresis in the transfer characteristics of the PECVD /cross-linked PVA gate dielectric OTFT. The blue arrow indicates the forward sweep and the red arrow indicates the backward sweep. The device with a thin layer (a) and the devices with thick layers [(c) and (d)] show opposite hysteresis behaviors. The least hysteresis is found in the device shown in (b) owing to the balance of the effect of the injected charges from the gate electrode and the trapped holes in the pentacene. The insets show the threshold voltage shift for the various devices showing the trend of the hysteresis.

Image of FIG. 3.
FIG. 3.

(Color online) Hysteresis in the transfer characteristics of optimized OTFTs for various channel lengths with . The devices show considerably reduced hysteresis behavior for a wide range of channel length. Inset: Output characteristics of OTFT with .

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics of the OTFTs with and without the layer during the negative gate bias stress and after its relaxation. (a) Without the layer, a positive shift and the degradation of the subthreshold swing are observed, due to the injection of electrons from the gate electrode into the cross-linked PVA. (b) With the layer, a negative shift which is attributed to trapped holes near the pentacene is observed after .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low hysteresis pentacene thin-film transistors using SiO2/cross-linked poly(vinyl alcohol) gate dielectric