1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Hysteresis mechanism in pentacene thin-film transistors with poly(4-vinyl phenol) gate insulator
Rent:
Rent this article for
USD
10.1063/1.2425042
/content/aip/journal/apl/89/26/10.1063/1.2425042
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2425042
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical transfer curve of the OTFTs with the PVP gate insulator. Severe hysteresis is observed.

Image of FIG. 2.
FIG. 2.

(Color online) Measured transfer curves of OTFTs with oxide/PVP double layer gate insulator when the oxide thickness is (a) , (b) , (c) , and (d) . A consistent trend of hysteresis is observed with the oxide thickness.

Image of FIG. 3.
FIG. 3.

(Color online) Transfer curves of OTFTs with oxide thickness of and PVP double layer gate insulator. For both the cases of (a) and (b) , the hysteresis is negligible.

Loading

Article metrics loading...

/content/aip/journal/apl/89/26/10.1063/1.2425042
2006-12-29
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteresis mechanism in pentacene thin-film transistors with poly(4-vinyl phenol) gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/26/10.1063/1.2425042
10.1063/1.2425042
SEARCH_EXPAND_ITEM