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Multibit memories using a structure of /partially oxidized amorphous
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10.1063/1.2219999
/content/aip/journal/apl/89/3/10.1063/1.2219999
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2219999
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM images of /partially oxidized structures. The partially oxidized was fabricated by the oxidation of for (a) and (b).

Image of FIG. 2.
FIG. 2.

hysteresis loops of three memory capacitors made using different structures: /partially oxidized (C1), (C2), and /partially oxidized (C3).

Image of FIG. 3.
FIG. 3.

P/E characteristics of capacitor C3 for five different levels, based on the FN scheme.

Image of FIG. 4.
FIG. 4.

Retention characteristics of capacitor C3 at room temperature. This shows four programming levels and one erasing level for memory. The retention data are extrapolated to for each level.

Image of FIG. 5.
FIG. 5.

Endurance characteristics of capacitor C3. Pulses of (, ) and (, ) were applied to the gate electrode for P/E operations, respectively.

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/content/aip/journal/apl/89/3/10.1063/1.2219999
2006-07-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multibit memories using a structure of SiO2/partially oxidized amorphous Si∕HfO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2219999
10.1063/1.2219999
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