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Cross-sectional HRTEM images of /partially oxidized structures. The partially oxidized was fabricated by the oxidation of for (a) and (b).
hysteresis loops of three memory capacitors made using different structures: /partially oxidized (C1), (C2), and /partially oxidized (C3).
P/E characteristics of capacitor C3 for five different levels, based on the FN scheme.
Retention characteristics of capacitor C3 at room temperature. This shows four programming levels and one erasing level for memory. The retention data are extrapolated to for each level.
Endurance characteristics of capacitor C3. Pulses of (, ) and (, ) were applied to the gate electrode for P/E operations, respectively.
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