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STEM image of the Ga film deposited onto amorphous silica, as obtained by high angle scattered electrons. The signal intensity is proportional to the electron density and therefore to the particle thickness. The marker at the bottom is long. The inset shows the particle size distribution.
Electron diffraction pattern of the sample of the previous figure at . The diffuse halo and the lack of definite diffracted circles is a clear indication of the lack of crystalline phases.
Ga edge XANES spectra of the continuous film at different temperatures as indicated (upper panel). The lower panel reports the corresponding derivatives. For the sake of clarity both the raw spectra and the derivatives were shifted of an arbitrary quantity. The main features on the edge are evidenced by the vertical lines.
Same as Fig. 3 but for the sample made of nanoparticles of Fig. 1.
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