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Device resistance and statistics: (a) Schematic diagram of the FM/CNT/FM devices. (b) curves for a Co/CNT/Ni device without annealing. (c) Statistical distribution of the two terminal resistance at . The inset shows the annealing procedure applied to the devices. (d) The curves for a Co/CNT/Ni device after annealing. Inset: MOKE hysteresis loop for a Co film measured at .
The transport properties of Co/CNT/Ni devices. (a)–(c) show the two terminal differential resistance measured during the magnetic field scan for samples A, B, and C, respectively. The temperature of measurement is indicated in the inset. The error bar includes uncertainty in the measurements of MR and noise. (d) and (e) show the SEM pictures of samples A and B, while (f) shows the AFM image of the sample C. The gap between the electrodes is also indicated. The temperature dependences of the magnetoresistance are shown in (g)–(i) for the three samples. The insets in (g)–(i) show the two terminal differential resistance measured at .
The bias dependence of magnetoresistance for samples A and B measured at .
The evolution of the magnetoresistance in sample C with multiple magnetic field scans. (a) In state 1, the sample showed the highest MR and a clear zero bias anomaly (inset). (b) In state 2, a hysteresis typical of a pinned magnetic layer is observed and the characteristics are now linear (inset).
Physical characteristics of the devices.
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