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Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method
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10.1063/1.2221918
/content/aip/journal/apl/89/3/10.1063/1.2221918
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2221918
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of the -axis oriented (top) and highly (117) oriented film (bottom).

Image of FIG. 2.
FIG. 2.

Morphologies of the highly -axis oriented film (a) and highly (117) oriented film (b) measured by an atomic force microscope in tapping mode.

Image of FIG. 3.
FIG. 3.

Hysteresis loops of the highly -axis oriented capacitor measured at various applied voltages: 11, 15, and .

Image of FIG. 4.
FIG. 4.

Variations of and values of the capacitor are plotted as a function of the applied voltage. The inset shows hysteresis loops measured at various applied voltages ranging between 4 and .

Image of FIG. 5.
FIG. 5.

Frequency dependence of dielectric constant and dielectric loss (a) and electrical fatigue characteristics (b) of capacitor. The switching voltage during the fatigue test is at a frequency of and the measurement voltage is .

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/content/aip/journal/apl/89/3/10.1063/1.2221918
2006-07-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2221918
10.1063/1.2221918
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