1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photoreflectance-probed excited states in quantum dashes grown on InP substrate
Rent:
Rent this article for
USD
10.1063/1.2226503
/content/aip/journal/apl/89/3/10.1063/1.2226503
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2226503
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top view scanning electron microscopy (SEM) images of quantum dash structures with various nominal amounts of InAs material.

Image of FIG. 2.
FIG. 2.

Room temperature PR (solid line) and PL (dashed line) spectra for samples with different nominal thicknesses of deposited InAs material (shown at each spectrum), translating into various QDash sizes. The vertical lines indicate the positions of optical transitions.

Image of FIG. 3.
FIG. 3.

PR and PL spectra of sample with measured at . The arrow indicates feature connected with WL optical transition, and the vertical dashed line indicates the optical transition in QDash.

Image of FIG. 4.
FIG. 4.

Energies of optical transitions taken from Lorentzian line-shape fits of PR spectra as a function of QDash sizes. The open squares indicate ground state transition, the open circles excited state transition, and the solid triangle transition in barrier layer. The dotted lines are guide to the eye.

Loading

Article metrics loading...

/content/aip/journal/apl/89/3/10.1063/1.2226503
2006-07-18
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoreflectance-probed excited states in InAs∕InGaAlAs quantum dashes grown on InP substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2226503
10.1063/1.2226503
SEARCH_EXPAND_ITEM