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Principle of NFL technique with the trilayer resist process. The NFL patterns were etched into the bottom layer by the RIE processes.
Scanning electron microscopy (SEM) images of (a) hp Cr mask pattern and (b) mask pattern.
Contour plots of light intensity distribution around (a) the CR45 mask and (b) the SI30 mask. (c) Minimum light intensity, i.e., the light intensity along the line in (a) and (b). (d) Light intensity contrast below the near-field masks. The light intensity contrast was defined as a value of . For comparison, that of an mask of wide space (SI45) was also plotted. The light intensity is relative to the incident plane wave. In the simulation, the resist layer was a thick single layer.
SEM images of hp resist patterns fabricated using (a) the Cr mask and (b) the mask. The exposure time was 8.9 and , respectively. Both resist layers consist of the SOG of thick and the bottom-layer resist of thick.
SEM image of (a) a hp mask pattern and (b) corresponding hp bottom-layer resist pattern. The exposure time was . The resist layer composition was same as the one in Fig. 4.
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