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Vertical GaP nanowires arranged at atomic steps on Si(111) substrates
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10.1063/1.2227800
/content/aip/journal/apl/89/3/10.1063/1.2227800
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2227800
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) A schematic image (a) and a LEEM image (b) of Au alloy islands self-arranged at single-layer steps on Si(111) surface.

Image of FIG. 2.
FIG. 2.

(Color online) (a) A schematic drawing of the growth procedure for GaP nanowires. Cross-sectional SEM images of the GaP wires grown by different growth procedures for comparison: (b1) cosupplied of TMGa and and (b2) presupplied of before TMGa supply; (c1) using 500 and two-step growth and (c2) only growth; (d1) V/III of 46 and (d2) V/III of 184.

Image of FIG. 3.
FIG. 3.

(Color online) (a) SEM images of GaP nanowire. (a1) Top view and (a2) 38° view from surface normal direction. (b) A TEM image of a GaP nanowire. (c) EDS mapping images of Si, Ga, P, and O at the wire-substrate interface.

Image of FIG. 4.
FIG. 4.

(Color online) (a1) Mapping images of height and current at for short GaP nanowires. (a2) Current-voltage graph at the wire (1) and the surface (2) in (a1).

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/content/aip/journal/apl/89/3/10.1063/1.2227800
2006-07-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical GaP nanowires arranged at atomic steps on Si(111) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2227800
10.1063/1.2227800
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