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Effective work function modification of atomic-layer-deposited-TaN film by capping layer
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10.1063/1.2234288
/content/aip/journal/apl/89/3/10.1063/1.2234288
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2234288
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

EWF of metals when used as single layer (grey) and as capping layer (black) of thick ALD-TaN film.

Image of FIG. 2.
FIG. 2.

Normalized curves of stack and stack representing flatband voltage shift to the positive bias. Corresponding -EOT plots are shown in the inset.

Image of FIG. 3.
FIG. 3.

EELS data of poly- sample. A significant interdiffusion of Ti and Ta can be observed.

Image of FIG. 4.
FIG. 4.

EWF variation as a function of PVD-Ti film thickness on 5 and thick ALD-TaN films.

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/content/aip/journal/apl/89/3/10.1063/1.2234288
2006-07-21
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective work function modification of atomic-layer-deposited-TaN film by capping layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/3/10.1063/1.2234288
10.1063/1.2234288
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