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Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy
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10.1063/1.2234566
/content/aip/journal/apl/89/4/10.1063/1.2234566
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2234566
/content/aip/journal/apl/89/4/10.1063/1.2234566
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/content/aip/journal/apl/89/4/10.1063/1.2234566
2006-07-24
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2234566
10.1063/1.2234566
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