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Influence of AlN layers on the interface stability of gate dielectric stacks
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10.1063/1.2236264
/content/aip/journal/apl/89/4/10.1063/1.2236264
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2236264
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Figures

Image of FIG. 1.
FIG. 1.

HRTEM images of the gate stack (a) as deposited and (b) after RTA. Note the thickness reduction of the -like layer at the Si interface in (b). In addition to thinning, silicide reaction was observed (see Fig. 2).

Image of FIG. 2.
FIG. 2.

(Color online) Interface reaction observed for the gate stack after the RTA. (a) HRTEM image showing thinning (arrows) near the reaction phase at the Si interface. (b) HAADF image showing Hf-rich silicide reaction phase protruding into the Si substrate. The inset shows the crystalline silicide.

Image of FIG. 3.
FIG. 3.

(Color online) HRTEM images of (a) the stack after RTA at and (b) the stack after RTA at , showing no thinning and a stable interface with the Si substrate.

Image of FIG. 4.
FIG. 4.

(Color online) Al -edge EELS of the AlN layer after the RTA.

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/content/aip/journal/apl/89/4/10.1063/1.2236264
2006-07-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of AlN layers on the interface stability of HfO2 gate dielectric stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2236264
10.1063/1.2236264
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