1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried interface
Rent:
Rent this article for
USD
10.1063/1.2240257
/content/aip/journal/apl/89/4/10.1063/1.2240257
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2240257
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Van der Pauw resistivity after isochronal anneals. Dotted lines with open symbols are bulk Si, solid lines with closed symbols are SOI, squares represent Ge PAI, and circles represent Ge PAI.

Image of FIG. 2.
FIG. 2.

Boron SIMS profiles (top) for Ge samples as implanted and after an for anneal in bulk Si and SOI. Solid line, open, and closed circles represent the as-implanted, bulk, and SOI samples, respectively. The bottom graph is the interstitial trapping efficiency of the EOR band after annealing, inferred from the trapped B peak in the SIMS profiles. Open circles and thick solid line with closed circles represent bulk and SOI, respectively.

Image of FIG. 3.
FIG. 3.

WB, , XTEM micrographs of Ge Bulk Si (a) and SOI samples (b) annealed at for . Parallel electron energy loss spectrocopy spectra obtained in both cases in the center of the image with the electron beam positioned onto the defect band are superimposed to the corresponding TEM micrographs to witness the close equivalence of the thickness of the TEM samples.

Loading

Article metrics loading...

/content/aip/journal/apl/89/4/10.1063/1.2240257
2006-07-26
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2240257
10.1063/1.2240257
SEARCH_EXPAND_ITEM