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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried interface
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10.1063/1.2240257
/content/aip/journal/apl/89/4/10.1063/1.2240257
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2240257
/content/aip/journal/apl/89/4/10.1063/1.2240257
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/content/aip/journal/apl/89/4/10.1063/1.2240257
2006-07-26
2014-11-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/4/10.1063/1.2240257
10.1063/1.2240257
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