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Improved -type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes
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10.1063/1.2227714
/content/aip/journal/apl/89/5/10.1063/1.2227714
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/5/10.1063/1.2227714

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of top contact -based OTFTs with heterojunction under source-drain electrodes.

Image of FIG. 2.
FIG. 2.

Output characteristics of -based OTFT with heterojunction buffer layer at varied from (at step of ).

Image of FIG. 3.
FIG. 3.

Transfer characteristic ( and ) of -based OTFTs at a fixed of . [(A) and (C)] Device with buffer layer; [(B) and (D)] device without buffer layer.

Image of FIG. 4.
FIG. 4.

characteristic of diode.

Tables

Generic image for table
Table I.

The typical electric parameters of -based OTFTs. Mobility and are extracted at . is the ratio of the highest current and the lowest current on the curve of . Total resistance is extracted from the linear region in output characteristic plot.

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/content/aip/journal/apl/89/5/10.1063/1.2227714
2006-08-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/5/10.1063/1.2227714
10.1063/1.2227714
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