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Direct observation of the strength of plasmon-longitudinal optical phonon interaction in -type GaAs
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View: Figures


Image of FIG. 1.
FIG. 1.

Frequencies of the mixed longitudinal optical phonon-plasmon modes ( and ) for -type GaAs as a function of the doping density as given by Eq. (2), and the band structure for GaAs depicting the photoexcited carrier dynamics after the arrival of the pump and probe pulses.

Image of FIG. 2.
FIG. 2.

Visible pump-mid-infrared probe differential transmission curves for various dopant density -type GaAs wafers. The data were modeled with convolution of a Gaussian and exponential function of the form: where (bold lines). The rise times increase with increasing dopant level. The pump wavelength is , the probe wavelength is .

Image of FIG. 3.
FIG. 3.

Phonon strengths for both the and mode as given by Eq. (1) (solid line), and rise times extracted from Fig. 2 (data points) plotted with respect to dopant density for -type GaAs. The rise times were normalized to the unscreened lifetime as extracted from the doped -type GaAs wafer, namely where for the doped sample.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct observation of the strength of plasmon-longitudinal optical phonon interaction in n-type GaAs