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Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes
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10.1063/1.2266596
/content/aip/journal/apl/89/5/10.1063/1.2266596
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/5/10.1063/1.2266596
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Figures

Image of FIG. 1.
FIG. 1.

(a) Device structures of perylene thin-film FET. The -channel measurement mode is shown in (a). (b) plots measured in -channel mode and (c) plot of perylene thin-film FET device with source/drain electrodes of Cu.

Image of FIG. 2.
FIG. 2.

(a) Energy level diagram of various metals used for source/drain electrodes and HOMO/LUMO of perylene; , and and are defined from photoemission data and optical gap (Refs. 13 and 14). dependence of (b) , (c) on-off ratio, and (d) in perylene thin-film FET device. For Mg in (c), “∎” refers to the ratio of to , respectively. See text for “●” and “▴.”

Image of FIG. 3.
FIG. 3.

(a) Schematic representation of FET operation in FET device with metal electrodes of large . Left: No application of and . Center: Only application of . Right: Application of and . plots of the FET device with Eu in the (b) -channel measurement mode and (c) -channel measurement mode.

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/content/aip/journal/apl/89/5/10.1063/1.2266596
2006-08-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/5/10.1063/1.2266596
10.1063/1.2266596
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