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Growth of ultrahigh-density quantum-confined germanium dots on thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) STM image of the substrate. , . (b) STM image of 4 MLs of Ge deposited on surface kept at room temperature. , . (c) STM image of the sample shown in panel (b) after annealing at for . , . Grayscale ranges (at right) confirm the sizable changes in the rms roughness values passing from the bare substrate to the amorphous Ge film and the Ge dots.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Two-dimensional (2D) histogram of the opposite of the gradient carried out on several STM images of the sample shown in Fig. 1(c). (b) Section of the histogram shown in the top panel (solid circles) compared with the same section of a histogram computed for a spherical cap with aspect ratio of 0.17 (bold solid line). The dot-dashed curves are the components corresponding to zero slope and to {113} facets.

Image of FIG. 3.
FIG. 3.

(Color online) (a) and (b) conductance curves for 4 MLs of Ge deposited on surface kept at room temperature and annealed at for (solid lines) and for a 15 ML nominal Ge film annealed at (dot-dashed lines). The stabilizing conditions are and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films