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Thermal stability of amorphous films on silicon
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10.1063/1.2222302
/content/aip/journal/apl/89/6/10.1063/1.2222302
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2222302
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD of thick thin films deposited on (001) Si after annealing in at 700, 800, 900, and for . The peaks correspond to crystalline , an orthorhombic perovskite.

Image of FIG. 2.
FIG. 2.

Cross-sectional HRTEM images of the interface from the same films studied by XRD in Fig. 1. The annealing conditions are (a) as deposited, (b) for in , and (c) for in .

Image of FIG. 3.
FIG. 3.

Transmission infrared absorption spectra taken at 74° incidence angle from the same thick (001) films studied in Figs. 1 and 2 as a function of annealing temperature. The absorbance intensity scale is indicated next to the vertical bar. All spectra are referenced to H-terminated (001) Si. (b) Shows a blow-up of the absorption region using a more sensitive absorbance scale.

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/content/aip/journal/apl/89/6/10.1063/1.2222302
2006-08-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of amorphous LaScO3 films on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2222302
10.1063/1.2222302
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