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Annealing effects on single Shockley faults in
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10.1063/1.2234740
/content/aip/journal/apl/89/6/10.1063/1.2234740
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2234740
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) KOH etched feature, (b) PL mapping image before high-power laser illumination, and (c) PL mapping image after high-power laser illumination for the identical position in a epitaxial layer. The inset image denotes a wide area. (d) PL spectra taken inside and outside the extended SSF.

Image of FIG. 2.
FIG. 2.

PL mapping images taken (a) after high-power laser illumination for SSF formation, followed by high temperature annealing at (b) 350 and (c) for , and (d) after secondary high-power laser illumination.

Image of FIG. 3.
FIG. 3.

Time dependence of faulted area of a right-angled triangular SSF in the course of annealing at for .

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/content/aip/journal/apl/89/6/10.1063/1.2234740
2006-08-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing effects on single Shockley faults in 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2234740
10.1063/1.2234740
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